Copper interconnect structure with amorphous tantalum iridium diffusion barrier
A method of forming a diffusion barrier for use in semiconductor device manufacturing includes depositing, by a physical vapor deposition (PVD) process, an iridium doped, tantalum based barrier layer over a patterned interlevel dielectric (ILD) layer, wherein the barrier layer is deposited with an i...
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| creator | DeHaven, Patrick W Edelstein, Daniel C Flaitz, Philip L Nogami, Takeshi Rossnagel, Stephen M Yang, Chih-Chao |
| description | A method of forming a diffusion barrier for use in semiconductor device manufacturing includes depositing, by a physical vapor deposition (PVD) process, an iridium doped, tantalum based barrier layer over a patterned interlevel dielectric (ILD) layer, wherein the barrier layer is deposited with an iridium concentration of at least 60 atomic % such that the barrier layer has a resulting amorphous structure. |
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| fullrecord | <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07951708</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07951708</sourcerecordid><originalsourceid>FETCH-uspatents_grants_079517083</originalsourceid><addsrcrecordid>eNqNyrEKwkAMANBbHET9h_yAUBGpzqXi5uIu8ZqzgTZ3JDn8fRX8AKe3vGW4drkUUmBx0phFKDqYa41eleDFPgLOWcuYq4GjOE51BlYe-OPAKVXjLPBAVSZdh0XCyWjzcxXg3N-6y7ZaQSdxuz8VvzTt6bBrm-P-j_IGwRg5NQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Copper interconnect structure with amorphous tantalum iridium diffusion barrier</title><source>USPTO Issued Patents</source><creator>DeHaven, Patrick W ; Edelstein, Daniel C ; Flaitz, Philip L ; Nogami, Takeshi ; Rossnagel, Stephen M ; Yang, Chih-Chao</creator><creatorcontrib>DeHaven, Patrick W ; Edelstein, Daniel C ; Flaitz, Philip L ; Nogami, Takeshi ; Rossnagel, Stephen M ; Yang, Chih-Chao ; International Business Machines Corporation</creatorcontrib><description>A method of forming a diffusion barrier for use in semiconductor device manufacturing includes depositing, by a physical vapor deposition (PVD) process, an iridium doped, tantalum based barrier layer over a patterned interlevel dielectric (ILD) layer, wherein the barrier layer is deposited with an iridium concentration of at least 60 atomic % such that the barrier layer has a resulting amorphous structure.</description><language>eng</language><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7951708$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64039</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7951708$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DeHaven, Patrick W</creatorcontrib><creatorcontrib>Edelstein, Daniel C</creatorcontrib><creatorcontrib>Flaitz, Philip L</creatorcontrib><creatorcontrib>Nogami, Takeshi</creatorcontrib><creatorcontrib>Rossnagel, Stephen M</creatorcontrib><creatorcontrib>Yang, Chih-Chao</creatorcontrib><creatorcontrib>International Business Machines Corporation</creatorcontrib><title>Copper interconnect structure with amorphous tantalum iridium diffusion barrier</title><description>A method of forming a diffusion barrier for use in semiconductor device manufacturing includes depositing, by a physical vapor deposition (PVD) process, an iridium doped, tantalum based barrier layer over a patterned interlevel dielectric (ILD) layer, wherein the barrier layer is deposited with an iridium concentration of at least 60 atomic % such that the barrier layer has a resulting amorphous structure.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNyrEKwkAMANBbHET9h_yAUBGpzqXi5uIu8ZqzgTZ3JDn8fRX8AKe3vGW4drkUUmBx0phFKDqYa41eleDFPgLOWcuYq4GjOE51BlYe-OPAKVXjLPBAVSZdh0XCyWjzcxXg3N-6y7ZaQSdxuz8VvzTt6bBrm-P-j_IGwRg5NQ</recordid><startdate>20110531</startdate><enddate>20110531</enddate><creator>DeHaven, Patrick W</creator><creator>Edelstein, Daniel C</creator><creator>Flaitz, Philip L</creator><creator>Nogami, Takeshi</creator><creator>Rossnagel, Stephen M</creator><creator>Yang, Chih-Chao</creator><scope>EFH</scope></search><sort><creationdate>20110531</creationdate><title>Copper interconnect structure with amorphous tantalum iridium diffusion barrier</title><author>DeHaven, Patrick W ; Edelstein, Daniel C ; Flaitz, Philip L ; Nogami, Takeshi ; Rossnagel, Stephen M ; Yang, Chih-Chao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_079517083</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>online_resources</toplevel><creatorcontrib>DeHaven, Patrick W</creatorcontrib><creatorcontrib>Edelstein, Daniel C</creatorcontrib><creatorcontrib>Flaitz, Philip L</creatorcontrib><creatorcontrib>Nogami, Takeshi</creatorcontrib><creatorcontrib>Rossnagel, Stephen M</creatorcontrib><creatorcontrib>Yang, Chih-Chao</creatorcontrib><creatorcontrib>International Business Machines Corporation</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DeHaven, Patrick W</au><au>Edelstein, Daniel C</au><au>Flaitz, Philip L</au><au>Nogami, Takeshi</au><au>Rossnagel, Stephen M</au><au>Yang, Chih-Chao</au><aucorp>International Business Machines Corporation</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Copper interconnect structure with amorphous tantalum iridium diffusion barrier</title><date>2011-05-31</date><risdate>2011</risdate><abstract>A method of forming a diffusion barrier for use in semiconductor device manufacturing includes depositing, by a physical vapor deposition (PVD) process, an iridium doped, tantalum based barrier layer over a patterned interlevel dielectric (ILD) layer, wherein the barrier layer is deposited with an iridium concentration of at least 60 atomic % such that the barrier layer has a resulting amorphous structure.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Copper interconnect structure with amorphous tantalum iridium diffusion barrier |
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