Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element

A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent...

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Bibliographische Detailangaben

Hauptverfasser:	Sun, Jonathan Zanhong, Allenspach, Rolf, Parkin, Stuart Stephen Papworth, Slonczewski, John Casimir, Terris, Bruce David
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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