Process for cleaning a semiconductor wafer using a cleaning solution
Semiconductor wafers are cleaned using a cleaning solution containing an alkaline ammonium component in an initial composition, wherein the semiconductor wafer is brought into contact with the cleaning solution in an individual-wafer treatment, and in the course of cleaning hydrogen fluoride is adde...
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creator | Zapilko, Clemens Buschhardt, Thomas Feijoo, Diego Schwab, Guenter |
description | Semiconductor wafers are cleaned using a cleaning solution containing an alkaline ammonium component in an initial composition, wherein the semiconductor wafer is brought into contact with the cleaning solution in an individual-wafer treatment, and in the course of cleaning hydrogen fluoride is added as further component to the cleaning solution, and the cleaning solution has at the end of cleaning, a composition that differs from the initial composition. |
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Buschhardt, Thomas ; Feijoo, Diego ; Schwab, Guenter</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_079389113</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Zapilko, Clemens</creatorcontrib><creatorcontrib>Buschhardt, Thomas</creatorcontrib><creatorcontrib>Feijoo, Diego</creatorcontrib><creatorcontrib>Schwab, Guenter</creatorcontrib><creatorcontrib>Siltronic AG</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zapilko, Clemens</au><au>Buschhardt, Thomas</au><au>Feijoo, Diego</au><au>Schwab, Guenter</au><aucorp>Siltronic AG</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Process for cleaning a semiconductor wafer using a cleaning solution</title><date>2011-05-10</date><risdate>2011</risdate><abstract>Semiconductor wafers are cleaned using a cleaning solution containing an alkaline ammonium component in an initial composition, wherein the semiconductor wafer is brought into contact with the cleaning solution in an individual-wafer treatment, and in the course of cleaning hydrogen fluoride is added as further component to the cleaning solution, and the cleaning solution has at the end of cleaning, a composition that differs from the initial composition.</abstract><oa>free_for_read</oa></addata></record> |
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title | Process for cleaning a semiconductor wafer using a cleaning solution |
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