Method of producing an epitaxial layer on semiconductor substrate and device produced with such a method

The invention relates to the manufacture of an epitaxial layer, with the following steps: providing a semiconductor substrate; providing a Si-Ge layer on the semiconductor substrate, having a first depth; -providing the semiconductor substrate with a doped layer with an n-type dopant material and ha...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Meunier-Beillard, Philippe, Huizing, Hendrik G. A
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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