Non volatile memory circuit with tailored reliability

A non-volatile memory (NVM) circuit is provided, that includes at least a first and second NVM sub-array. The first sub-array is built from first memory cells. The second NVM sub-array is built from second memory cells that are constructed differently from the first memory cells. The NVM sub-arrays...

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Bibliographische Detailangaben
Hauptverfasser: Ma, Yanjun, Mozsgai, Steven I
Format: Patent
Sprache:eng
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