Semiconductor device with tapered trenches and impurity concentration gradients

A single crystal semiconductor layer of a first conduction type is disposed on a surface of a semiconductor substrate. A plurality of trenches are provided in the semiconductor layer to form a plurality of first semiconductor regions of the first conduction type at intervals in a direction parallel...

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Bibliographische Detailangaben

Hauptverfasser:	Tokano, Kenichi, Matsuda, Tetsuo, Saito, Wataru
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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