Structure and method of forming a topside contact to a backside terminal of a semiconductor device

A vertically conducting semiconductor device includes a semiconductor substrate having a topside surface and a backside surface. The semiconductor substrate serves as a terminal of the vertically conducting device for biasing the vertically conducting device during operation. An epitaxial layer exte...

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Bibliographische Detailangaben

Hauptverfasser:	Andrews, John T, Yilmaz, Hamza, Marchant, Bruce, Ho, Ihsiu
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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