Gallium nitride layer with diamond layers

Gallium nitride layer with diamond layers

In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating includes using a microwave plasma che...

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Bibliographische Detailangaben
Hauptverfasser: Korenstein, Ralph, Bernstein, Steven D, Pereira, Stephen J
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating includes using a microwave plasma chemical vapor deposition (CVD) process to deposit the second diamond layer onto the first diamond layer.