Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate

2 2 A polycrystalline Si thin film and a single crystal Si thin film are formed on an SiOfilm deposited on an insulating substrate. A polycrystalline Si layer is grown by thermally crystallizing an amorphous Si thin film so as to form the polycrystalline Si thin film. A single crystal Si substrate,...

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Bibliographische Detailangaben
Hauptverfasser: Takafuji, Yutaka, Itoga, Takashi
Format: Patent
Sprache:eng
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