Phase change materials and associated memory devices

A memory device utilizes a phase change material as the storage medium. The phase change material includes at least one of Ge, Sb, Te, Se, As, and S, as well as a nitride compound as a dopant. The memory device can be a solid-state memory cell with electrodes in electrical communication with the pha...

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Bibliographische Detailangaben

Hauptverfasser:	Chen, Yi-Chou, Houle, Frances Anne, Raoux, Simone, Rettner, Charles, Schrott, Alejandro Gabriel
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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