Nonvolatile memory device and method for fabricating the same

A nonvolatile memory device includes a plurality of strings each of which is configured with a first select transistor, a second select transistor, and a plurality of memory cells connected in series between the first and second select transistors. A common source line is connected to a source of th...

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1. Verfasser:	Kim, Byong-Kook
Format:	Patent
Sprache:	eng
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creator	Kim, Byong-Kook
description	A nonvolatile memory device includes a plurality of strings each of which is configured with a first select transistor, a second select transistor, and a plurality of memory cells connected in series between the first and second select transistors. A common source line is connected to a source of the second select transistor. A metal interconnection is electrically insulated from the common source line, and connected to the source of the second select transistor.
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title	Nonvolatile memory device and method for fabricating the same
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