Methods for controlling dopant concentration and activation in semiconductor structures

The present invention provides methods for fabricating semiconductor structures and devices, particularly ultra-shallow doped semiconductor structures exhibiting low electrical resistance. Methods of the present invention use modification of the composition of semiconductor surfaces to allow fabrica...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Seebauer, Edmund G, Braatz, Richard D, Jung, Michael Yoo Lim, Gunawan, Rudiyanto
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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