CMP polishing slurry and polishing method

CMP polishing slurry and polishing method

The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any on...

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Hauptverfasser: Fukasawa, Masato, Yoshida, Masato, Koyama, Naoyuki, Ootsuki, Yuto, Yamagishi, Chiaki, Enomoto, Kazuhiro, Haga, Kouji, Kurata, Yasushi
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Sprache:eng
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creator Fukasawa, Masato
Yoshida, Masato
Koyama, Naoyuki
Ootsuki, Yuto
Yamagishi, Chiaki
Enomoto, Kazuhiro
Haga, Kouji
Kurata, Yasushi
description The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
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fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07837800</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07837800</sourcerecordid><originalsourceid>FETCH-uspatents_grants_078378003</originalsourceid><addsrcrecordid>eNrjZNB09g1QKMjPySzOyMxLVyjOKS0qqlRIzEtBEsxNLcnIT-FhYE1LzClO5YXS3AwKbq4hzh66pcUFiSWpeSXF8elFiSDKwNzC2NzCwMCYCCUAzEkpfw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CMP polishing slurry and polishing method</title><source>USPTO Issued Patents</source><creator>Fukasawa, Masato ; Yoshida, Masato ; Koyama, Naoyuki ; Ootsuki, Yuto ; Yamagishi, Chiaki ; Enomoto, Kazuhiro ; Haga, Kouji ; Kurata, Yasushi</creator><creatorcontrib>Fukasawa, Masato ; Yoshida, Masato ; Koyama, Naoyuki ; Ootsuki, Yuto ; Yamagishi, Chiaki ; Enomoto, Kazuhiro ; Haga, Kouji ; Kurata, Yasushi ; Hitachi Chemical Co., Ltd</creatorcontrib><description>The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.</description><language>eng</language><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7837800$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64039</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7837800$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Fukasawa, Masato</creatorcontrib><creatorcontrib>Yoshida, Masato</creatorcontrib><creatorcontrib>Koyama, Naoyuki</creatorcontrib><creatorcontrib>Ootsuki, Yuto</creatorcontrib><creatorcontrib>Yamagishi, Chiaki</creatorcontrib><creatorcontrib>Enomoto, Kazuhiro</creatorcontrib><creatorcontrib>Haga, Kouji</creatorcontrib><creatorcontrib>Kurata, Yasushi</creatorcontrib><creatorcontrib>Hitachi Chemical Co., Ltd</creatorcontrib><title>CMP polishing slurry and polishing method</title><description>The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZNB09g1QKMjPySzOyMxLVyjOKS0qqlRIzEtBEsxNLcnIT-FhYE1LzClO5YXS3AwKbq4hzh66pcUFiSWpeSXF8elFiSDKwNzC2NzCwMCYCCUAzEkpfw</recordid><startdate>20101123</startdate><enddate>20101123</enddate><creator>Fukasawa, Masato</creator><creator>Yoshida, Masato</creator><creator>Koyama, Naoyuki</creator><creator>Ootsuki, Yuto</creator><creator>Yamagishi, Chiaki</creator><creator>Enomoto, Kazuhiro</creator><creator>Haga, Kouji</creator><creator>Kurata, Yasushi</creator><scope>EFH</scope></search><sort><creationdate>20101123</creationdate><title>CMP polishing slurry and polishing method</title><author>Fukasawa, Masato ; Yoshida, Masato ; Koyama, Naoyuki ; Ootsuki, Yuto ; Yamagishi, Chiaki ; Enomoto, Kazuhiro ; Haga, Kouji ; Kurata, Yasushi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_078378003</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Fukasawa, Masato</creatorcontrib><creatorcontrib>Yoshida, Masato</creatorcontrib><creatorcontrib>Koyama, Naoyuki</creatorcontrib><creatorcontrib>Ootsuki, Yuto</creatorcontrib><creatorcontrib>Yamagishi, Chiaki</creatorcontrib><creatorcontrib>Enomoto, Kazuhiro</creatorcontrib><creatorcontrib>Haga, Kouji</creatorcontrib><creatorcontrib>Kurata, Yasushi</creatorcontrib><creatorcontrib>Hitachi Chemical Co., Ltd</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fukasawa, Masato</au><au>Yoshida, Masato</au><au>Koyama, Naoyuki</au><au>Ootsuki, Yuto</au><au>Yamagishi, Chiaki</au><au>Enomoto, Kazuhiro</au><au>Haga, Kouji</au><au>Kurata, Yasushi</au><aucorp>Hitachi Chemical Co., Ltd</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CMP polishing slurry and polishing method</title><date>2010-11-23</date><risdate>2010</risdate><abstract>The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.</abstract><oa>free_for_read</oa></addata></record>
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title CMP polishing slurry and polishing method
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T00%3A33%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Fukasawa,%20Masato&rft.aucorp=Hitachi%20Chemical%20Co.,%20Ltd&rft.date=2010-11-23&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E07837800%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true