SCR controlled by the power bias

A composite dual SCR circuit that acts to protect the Vcc node as well as an I/O node or pin. The dual SCR uses the Vcc to control or program the triggering point of the SCR connected to an I/O node. When Vcc is low, the SCR protecting an I/O node triggers a few volts above ground, but when Vcc is h...

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Hauptverfasser: Ryu, Junhyeong, Kang, Taeghyun, Kim, Moonho
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creator Ryu, Junhyeong
Kang, Taeghyun
Kim, Moonho
description A composite dual SCR circuit that acts to protect the Vcc node as well as an I/O node or pin. The dual SCR uses the Vcc to control or program the triggering point of the SCR connected to an I/O node. When Vcc is low, the SCR protecting an I/O node triggers a few volts above ground, but when Vcc is high the trigger point of the SCR protecting the I/O node is much higher. The dual SCR incorporates added diffusions to an existing first SCR structure between the power node and the ground node thereby forming a second SCR. The first and second SCRs share a common cathode transistor. In one illustrative embodiment, only one SCR is constructed incorporating the Vcc to control the triggering of the SCR.
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fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07834378</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07834378</sourcerecordid><originalsourceid>FETCH-uspatents_grants_078343783</originalsourceid><addsrcrecordid>eNrjZFAIdg5SSM7PKynKz8lJTVFIqlQoyUhVKMgvTy1SSMpMLOZhYE1LzClO5YXS3AwKbq4hzh66pcUFiSWpeSXF8elFiSDKwNzC2MQYSBChBAD7biWr</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SCR controlled by the power bias</title><source>USPTO Issued Patents</source><creator>Ryu, Junhyeong ; Kang, Taeghyun ; Kim, Moonho</creator><creatorcontrib>Ryu, Junhyeong ; Kang, Taeghyun ; Kim, Moonho ; Fairchild Korea Semiconductor Ltd</creatorcontrib><description>A composite dual SCR circuit that acts to protect the Vcc node as well as an I/O node or pin. The dual SCR uses the Vcc to control or program the triggering point of the SCR connected to an I/O node. When Vcc is low, the SCR protecting an I/O node triggers a few volts above ground, but when Vcc is high the trigger point of the SCR protecting the I/O node is much higher. The dual SCR incorporates added diffusions to an existing first SCR structure between the power node and the ground node thereby forming a second SCR. The first and second SCRs share a common cathode transistor. In one illustrative embodiment, only one SCR is constructed incorporating the Vcc to control the triggering of the SCR.</description><language>eng</language><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7834378$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64012</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7834378$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Ryu, Junhyeong</creatorcontrib><creatorcontrib>Kang, Taeghyun</creatorcontrib><creatorcontrib>Kim, Moonho</creatorcontrib><creatorcontrib>Fairchild Korea Semiconductor Ltd</creatorcontrib><title>SCR controlled by the power bias</title><description>A composite dual SCR circuit that acts to protect the Vcc node as well as an I/O node or pin. The dual SCR uses the Vcc to control or program the triggering point of the SCR connected to an I/O node. When Vcc is low, the SCR protecting an I/O node triggers a few volts above ground, but when Vcc is high the trigger point of the SCR protecting the I/O node is much higher. The dual SCR incorporates added diffusions to an existing first SCR structure between the power node and the ground node thereby forming a second SCR. The first and second SCRs share a common cathode transistor. In one illustrative embodiment, only one SCR is constructed incorporating the Vcc to control the triggering of the SCR.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZFAIdg5SSM7PKynKz8lJTVFIqlQoyUhVKMgvTy1SSMpMLOZhYE1LzClO5YXS3AwKbq4hzh66pcUFiSWpeSXF8elFiSDKwNzC2MQYSBChBAD7biWr</recordid><startdate>20101116</startdate><enddate>20101116</enddate><creator>Ryu, Junhyeong</creator><creator>Kang, Taeghyun</creator><creator>Kim, Moonho</creator><scope>EFH</scope></search><sort><creationdate>20101116</creationdate><title>SCR controlled by the power bias</title><author>Ryu, Junhyeong ; Kang, Taeghyun ; Kim, Moonho</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_078343783</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Ryu, Junhyeong</creatorcontrib><creatorcontrib>Kang, Taeghyun</creatorcontrib><creatorcontrib>Kim, Moonho</creatorcontrib><creatorcontrib>Fairchild Korea Semiconductor Ltd</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ryu, Junhyeong</au><au>Kang, Taeghyun</au><au>Kim, Moonho</au><aucorp>Fairchild Korea Semiconductor Ltd</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SCR controlled by the power bias</title><date>2010-11-16</date><risdate>2010</risdate><abstract>A composite dual SCR circuit that acts to protect the Vcc node as well as an I/O node or pin. The dual SCR uses the Vcc to control or program the triggering point of the SCR connected to an I/O node. When Vcc is low, the SCR protecting an I/O node triggers a few volts above ground, but when Vcc is high the trigger point of the SCR protecting the I/O node is much higher. The dual SCR incorporates added diffusions to an existing first SCR structure between the power node and the ground node thereby forming a second SCR. The first and second SCRs share a common cathode transistor. In one illustrative embodiment, only one SCR is constructed incorporating the Vcc to control the triggering of the SCR.</abstract><oa>free_for_read</oa></addata></record>
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title SCR controlled by the power bias
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T07%3A13%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Ryu,%20Junhyeong&rft.aucorp=Fairchild%20Korea%20Semiconductor%20Ltd&rft.date=2010-11-16&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E07834378%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true