Page buffer and programming method of a non-volatile memory device

A page buffer includes a first ground voltage supply unit for applying a ground voltage to first and second registers according to a level of a sense node, and a second ground voltage supply unit for applying the ground voltage to the first and second registers irrespective of a level of the sense n...

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Bibliographische Detailangaben

Hauptverfasser:	Park, Se Chun, Wang, Jong Hyun, Noh, Yu Jong
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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