Methods of forming flash memory devices including blocking oxide films

A method of forming a flash memory device can include forming a tunneling oxide film on a semiconductor substrate, forming a charge storing layer on the tunneling oxide film, forming a first blocking oxide film on the charge storing layer at a first temperature, forming a second blocking oxide film...

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Bibliographische Detailangaben
Hauptverfasser: Ryu, Min-kyung, Choi, Han-mei, Lee, Seung-hwan, Kim, Sun-jung, Oh, Se-hoon
Format: Patent
Sprache:eng
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