Semiconductor device having improved oxide thickness at a shallow trench isolation edge and method of manufacture thereof

One aspect of a semiconductor device includes an active region located in a semiconductor substrate and having an isolation region located therebetween. The active regions have corners adjacent the isolation region. An oxide layer is located over the active regions and the corners, which may also in...

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Bibliographische Detailangaben

Hauptverfasser:	Hu, Binghua, Eugen, Mindricelu P, Gilmore, Damien T, Wofford, Bill A
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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