Semiconductor device with a vertical MOSFET including a superlattice and related methods
A semiconductor device may include at least one vertical Metal Oxide Semiconductor Field Effect Transistor (MOSFET) on a substrate. The vertical MOSFET may include at least one superlattice including a plurality of laterally stacked groups of layers transverse to the substrate. The vertical MOSFET(s...
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| Sprache: | eng |
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