Method for reducing silicide defects in integrated circuits

A method for forming silicide contacts in integrated circuits (ICs) is described. A spacer pull-back etch is performed during the salicidation process to reduce the stress between the spacer and source/drain silicide contact at the spacer undercut. This prevents the propagation of surface defects in...

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Bibliographische Detailangaben

Hauptverfasser:	Ye, Jeff Jianhui, Liu, Huang, See, Alex K H, Lu, Wei, Cong, Hai, Koh, Hui Peng, Zhou, Mei Sheng, Hsia, Liang Choo
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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