Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI sructure with elevated source/drain

The present invention provides a strained/SGOI structure that includes an active device region of a relaxed SiGe layer, a strained Si layer located atop the relaxed SiGe layer, a raised source/drain region located atop a portion of the strained Si layer, and a stack comprising at least a gate dielec...

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Bibliographische Detailangaben

Hauptverfasser:	Beintner, Jochen, Bronner, Gary B, Divakaruni, Ramachandra, Kim, Byeong Y
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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