Determining photoresist parameters using optical metrology
To generate a simulated diffraction signal, one or more values of one or more photoresist parameters, which characterize behavior of photoresist when the photoresist undergoes processing steps in a wafer application, are obtained. One or more values of one or more profile parameters are derived usin...
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| creator | Bischoff, Joerg Hetzer, David |
| description | To generate a simulated diffraction signal, one or more values of one or more photoresist parameters, which characterize behavior of photoresist when the photoresist undergoes processing steps in a wafer application, are obtained. One or more values of one or more profile parameters are derived using the one or more values of the one or more photoresist parameters. The one or more profile parameters characterize one or more geometric features of the structure. A simulated diffraction signal is generated using the one or more values of the one or more profile parameters. The simulated diffraction signal characterizes behavior of light diffracted from the structure. The generated simulated diffraction signal is associated with the one or more values of the one or more photoresist parameters. The generated simulated diffraction signal, the one or more values of the one or more photoresist parameters, and the association between the generated simulated diffraction signal and the one or more values of the one or more photoresist parameters are stored. |
| format | Patent |
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One or more values of one or more profile parameters are derived using the one or more values of the one or more photoresist parameters. The one or more profile parameters characterize one or more geometric features of the structure. A simulated diffraction signal is generated using the one or more values of the one or more profile parameters. The simulated diffraction signal characterizes behavior of light diffracted from the structure. The generated simulated diffraction signal is associated with the one or more values of the one or more photoresist parameters. The generated simulated diffraction signal, the one or more values of the one or more photoresist parameters, and the association between the generated simulated diffraction signal and the one or more values of the one or more photoresist parameters are stored.</description><language>eng</language><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7728976$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64038</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7728976$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Bischoff, Joerg</creatorcontrib><creatorcontrib>Hetzer, David</creatorcontrib><creatorcontrib>Tokyo Electron Limited</creatorcontrib><title>Determining photoresist parameters using optical metrology</title><description>To generate a simulated diffraction signal, one or more values of one or more photoresist parameters, which characterize behavior of photoresist when the photoresist undergoes processing steps in a wafer application, are obtained. One or more values of one or more profile parameters are derived using the one or more values of the one or more photoresist parameters. The one or more profile parameters characterize one or more geometric features of the structure. A simulated diffraction signal is generated using the one or more values of the one or more profile parameters. The simulated diffraction signal characterizes behavior of light diffracted from the structure. The generated simulated diffraction signal is associated with the one or more values of the one or more photoresist parameters. The generated simulated diffraction signal, the one or more values of the one or more photoresist parameters, and the association between the generated simulated diffraction signal and the one or more values of the one or more photoresist parameters are stored.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZLBySS1JLcrNzMvMS1coyMgvyS9KLc4sLlEoSCxKzAXJFSuUFoMk8wtKMpMTcxSAgkX5OfnplTwMrGmJOcWpvFCam0HBzTXE2UO3tLggsSQ1r6Q4Pr0oEUQZmJsbWViamxkToQQAyPgxLQ</recordid><startdate>20100601</startdate><enddate>20100601</enddate><creator>Bischoff, Joerg</creator><creator>Hetzer, David</creator><scope>EFH</scope></search><sort><creationdate>20100601</creationdate><title>Determining photoresist parameters using optical metrology</title><author>Bischoff, Joerg ; Hetzer, David</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_077289763</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Bischoff, Joerg</creatorcontrib><creatorcontrib>Hetzer, David</creatorcontrib><creatorcontrib>Tokyo Electron Limited</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bischoff, Joerg</au><au>Hetzer, David</au><aucorp>Tokyo Electron Limited</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Determining photoresist parameters using optical metrology</title><date>2010-06-01</date><risdate>2010</risdate><abstract>To generate a simulated diffraction signal, one or more values of one or more photoresist parameters, which characterize behavior of photoresist when the photoresist undergoes processing steps in a wafer application, are obtained. One or more values of one or more profile parameters are derived using the one or more values of the one or more photoresist parameters. The one or more profile parameters characterize one or more geometric features of the structure. A simulated diffraction signal is generated using the one or more values of the one or more profile parameters. The simulated diffraction signal characterizes behavior of light diffracted from the structure. The generated simulated diffraction signal is associated with the one or more values of the one or more photoresist parameters. The generated simulated diffraction signal, the one or more values of the one or more photoresist parameters, and the association between the generated simulated diffraction signal and the one or more values of the one or more photoresist parameters are stored.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Determining photoresist parameters using optical metrology |
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