Mixed-signal semiconductor platform incorporating fully-depleted castellated-gate MOSFET device and method of manufacture thereof

A Mixed-Signal Semiconductor Platform Incorporating Castellated-Gate MOSFET device(s) capable of Fully-Depleted operation is disclosed along with a method of making the same. The composite device/technology platform has robust I/O applications and includes a starting semiconductor substrate of a fir...

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Bibliographische Detailangaben
1. Verfasser:	Seliskar, John J
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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