Low temperature doped silicon layer formation

A doped silicon layer is formed in a batch process chamber at low temperatures. The silicon precursor for the silicon layer formation is a polysilane, such as trisilane, and the dopant precursor is an n-type dopant, such as phosphine. The silicon precursor can be flowed into the process chamber with...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Zagwijn, Peter Marc, Oosterlaken, Theodorus Gerardus Maria, Van Aerde, Steven R. A, Fischer, Pamela René
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!