Semiconductor device including a transistor with a gate electrode having a taper portion
A method for manufacturing a semiconductor device having a circuit made up by a TFT (Thin Film Transistor) having GOLD (Gate-Drain Overlapped LDD) structure, which an LDD region overlaps which a portion of a gate electrode, wherein the formation of a concentration depth profile peak of hydrogen in a...
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| Format: | Patent |
| Sprache: | eng |
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