Method and system for managing voltage swings across field effect transistors
A circuit for managing voltage swings across FETs comprising a reference precision resistor, a first FET and a second FET, wherein a gate of the first FET is tied to a gate of the second FET, wherein a drain to source resistance of the second FET is substantially equal to or is a multiple of a resis...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A circuit for managing voltage swings across FETs comprising a reference precision resistor, a first FET and a second FET, wherein a gate of the first FET is tied to a gate of the second FET, wherein a drain to source resistance of the second FET is substantially equal to or is a multiple of a resistance of the reference precision resistor, and wherein a gate voltage of the second FET is applied to a gate of the first FET to set a bias point of the first FET, and a third FET cascoded to the first FET, wherein a source of the first FET is coupled to the drain of the third FET to extend a voltage range in which respective gate voltages of the first FET and the third FET maintain a linear relationship with respective drain to source voltages of the first FET and the third FET. |
---|