Profile adjustment in plasma ion implanter

Profile adjustment in plasma ion implanter

A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant...

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Hauptverfasser: Godet, Ludovic, Papasouliotis, George D, Fang, Ziwei, Appel, Richard, Deno, Vincent, Singh, Vikram, Persing, Harold M
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Sprache:eng
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creator Godet, Ludovic
Papasouliotis, George D
Fang, Ziwei
Appel, Richard
Deno, Vincent
Singh, Vikram
Persing, Harold M
description A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.
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fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07687787</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07687787</sourcerecordid><originalsourceid>FETCH-uspatents_grants_076877873</originalsourceid><addsrcrecordid>eNrjZNAKKMpPy8xJVUhMySotLslNzStRyMxTKMhJLM5NVMjMz1PIzAVy8kpSi3gYWNMSc4pTeaE0N4OCm2uIs4duaXFBYglQY3F8elEiiDIwN7MwN7cwNyZCCQAdeio6</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Profile adjustment in plasma ion implanter</title><source>USPTO Issued Patents</source><creator>Godet, Ludovic ; Papasouliotis, George D ; Fang, Ziwei ; Appel, Richard ; Deno, Vincent ; Singh, Vikram ; Persing, Harold M</creator><creatorcontrib>Godet, Ludovic ; Papasouliotis, George D ; Fang, Ziwei ; Appel, Richard ; Deno, Vincent ; Singh, Vikram ; Persing, Harold M ; Varian Semiconductor Equipment Associates, Inc</creatorcontrib><description>A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.</description><language>eng</language><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7687787$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64015</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7687787$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Godet, Ludovic</creatorcontrib><creatorcontrib>Papasouliotis, George D</creatorcontrib><creatorcontrib>Fang, Ziwei</creatorcontrib><creatorcontrib>Appel, Richard</creatorcontrib><creatorcontrib>Deno, Vincent</creatorcontrib><creatorcontrib>Singh, Vikram</creatorcontrib><creatorcontrib>Persing, Harold M</creatorcontrib><creatorcontrib>Varian Semiconductor Equipment Associates, Inc</creatorcontrib><title>Profile adjustment in plasma ion implanter</title><description>A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZNAKKMpPy8xJVUhMySotLslNzStRyMxTKMhJLM5NVMjMz1PIzAVy8kpSi3gYWNMSc4pTeaE0N4OCm2uIs4duaXFBYglQY3F8elEiiDIwN7MwN7cwNyZCCQAdeio6</recordid><startdate>20100330</startdate><enddate>20100330</enddate><creator>Godet, Ludovic</creator><creator>Papasouliotis, George D</creator><creator>Fang, Ziwei</creator><creator>Appel, Richard</creator><creator>Deno, Vincent</creator><creator>Singh, Vikram</creator><creator>Persing, Harold M</creator><scope>EFH</scope></search><sort><creationdate>20100330</creationdate><title>Profile adjustment in plasma ion implanter</title><author>Godet, Ludovic ; Papasouliotis, George D ; Fang, Ziwei ; Appel, Richard ; Deno, Vincent ; Singh, Vikram ; Persing, Harold M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_076877873</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Godet, Ludovic</creatorcontrib><creatorcontrib>Papasouliotis, George D</creatorcontrib><creatorcontrib>Fang, Ziwei</creatorcontrib><creatorcontrib>Appel, Richard</creatorcontrib><creatorcontrib>Deno, Vincent</creatorcontrib><creatorcontrib>Singh, Vikram</creatorcontrib><creatorcontrib>Persing, Harold M</creatorcontrib><creatorcontrib>Varian Semiconductor Equipment Associates, Inc</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Godet, Ludovic</au><au>Papasouliotis, George D</au><au>Fang, Ziwei</au><au>Appel, Richard</au><au>Deno, Vincent</au><au>Singh, Vikram</au><au>Persing, Harold M</au><aucorp>Varian Semiconductor Equipment Associates, Inc</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Profile adjustment in plasma ion implanter</title><date>2010-03-30</date><risdate>2010</risdate><abstract>A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.</abstract><oa>free_for_read</oa></addata></record>
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title Profile adjustment in plasma ion implanter
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T14%3A58%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Godet,%20Ludovic&rft.aucorp=Varian%20Semiconductor%20Equipment%20Associates,%20Inc&rft.date=2010-03-30&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E07687787%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true