Laser facet passivation

Laser facet passivation

Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within the controlled atmosphere of the...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Charache, Greg, Hostetler, John, Jiang, Ching-Long, Menna, Raymond J, Radionova, Radosveta, Roff, Robert W, Schlüter, Holger
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Charache, Greg
Hostetler, John
Jiang, Ching-Long
Menna, Raymond J
Radionova, Radosveta
Roff, Robert W
Schlüter, Holger
description Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within the controlled atmosphere of the first chamber to form a native oxide layer hating a predetermined thickness on the front and back facets of the diode laser. After cleavage, the diode laser is transported from the first chamber to a second chamber within a controlled atmosphere, the native oxide layer on the front and back facets of the diode laser is partially removed, an amorphous surface layer is formed on the front and back facets of the diode laser, and the front and back facets of the diode laser are passivated.
format Patent
fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07687291</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07687291</sourcerecordid><originalsourceid>FETCH-uspatents_grants_076872913</originalsourceid><addsrcrecordid>eNrjZBD3SSxOLVJIS0xOLVEoSCwuzixLLMnMz-NhYE1LzClO5YXS3AwKbq4hzh66pcUFiSWpeSXF8elFiSDKwNzMwtzI0tCYCCUAtWQi5w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Laser facet passivation</title><source>USPTO Issued Patents</source><creator>Charache, Greg ; Hostetler, John ; Jiang, Ching-Long ; Menna, Raymond J ; Radionova, Radosveta ; Roff, Robert W ; Schlüter, Holger</creator><creatorcontrib>Charache, Greg ; Hostetler, John ; Jiang, Ching-Long ; Menna, Raymond J ; Radionova, Radosveta ; Roff, Robert W ; Schlüter, Holger ; Trumpf Photonics Inc</creatorcontrib><description>Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within the controlled atmosphere of the first chamber to form a native oxide layer hating a predetermined thickness on the front and back facets of the diode laser. After cleavage, the diode laser is transported from the first chamber to a second chamber within a controlled atmosphere, the native oxide layer on the front and back facets of the diode laser is partially removed, an amorphous surface layer is formed on the front and back facets of the diode laser, and the front and back facets of the diode laser are passivated.</description><language>eng</language><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7687291$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64039</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7687291$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Charache, Greg</creatorcontrib><creatorcontrib>Hostetler, John</creatorcontrib><creatorcontrib>Jiang, Ching-Long</creatorcontrib><creatorcontrib>Menna, Raymond J</creatorcontrib><creatorcontrib>Radionova, Radosveta</creatorcontrib><creatorcontrib>Roff, Robert W</creatorcontrib><creatorcontrib>Schlüter, Holger</creatorcontrib><creatorcontrib>Trumpf Photonics Inc</creatorcontrib><title>Laser facet passivation</title><description>Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within the controlled atmosphere of the first chamber to form a native oxide layer hating a predetermined thickness on the front and back facets of the diode laser. After cleavage, the diode laser is transported from the first chamber to a second chamber within a controlled atmosphere, the native oxide layer on the front and back facets of the diode laser is partially removed, an amorphous surface layer is formed on the front and back facets of the diode laser, and the front and back facets of the diode laser are passivated.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZBD3SSxOLVJIS0xOLVEoSCwuzixLLMnMz-NhYE1LzClO5YXS3AwKbq4hzh66pcUFiSWpeSXF8elFiSDKwNzMwtzI0tCYCCUAtWQi5w</recordid><startdate>20100330</startdate><enddate>20100330</enddate><creator>Charache, Greg</creator><creator>Hostetler, John</creator><creator>Jiang, Ching-Long</creator><creator>Menna, Raymond J</creator><creator>Radionova, Radosveta</creator><creator>Roff, Robert W</creator><creator>Schlüter, Holger</creator><scope>EFH</scope></search><sort><creationdate>20100330</creationdate><title>Laser facet passivation</title><author>Charache, Greg ; Hostetler, John ; Jiang, Ching-Long ; Menna, Raymond J ; Radionova, Radosveta ; Roff, Robert W ; Schlüter, Holger</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_076872913</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Charache, Greg</creatorcontrib><creatorcontrib>Hostetler, John</creatorcontrib><creatorcontrib>Jiang, Ching-Long</creatorcontrib><creatorcontrib>Menna, Raymond J</creatorcontrib><creatorcontrib>Radionova, Radosveta</creatorcontrib><creatorcontrib>Roff, Robert W</creatorcontrib><creatorcontrib>Schlüter, Holger</creatorcontrib><creatorcontrib>Trumpf Photonics Inc</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Charache, Greg</au><au>Hostetler, John</au><au>Jiang, Ching-Long</au><au>Menna, Raymond J</au><au>Radionova, Radosveta</au><au>Roff, Robert W</au><au>Schlüter, Holger</au><aucorp>Trumpf Photonics Inc</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Laser facet passivation</title><date>2010-03-30</date><risdate>2010</risdate><abstract>Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within the controlled atmosphere of the first chamber to form a native oxide layer hating a predetermined thickness on the front and back facets of the diode laser. After cleavage, the diode laser is transported from the first chamber to a second chamber within a controlled atmosphere, the native oxide layer on the front and back facets of the diode laser is partially removed, an amorphous surface layer is formed on the front and back facets of the diode laser, and the front and back facets of the diode laser are passivated.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_uspatents_grants_07687291
source USPTO Issued Patents
title Laser facet passivation
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T20%3A09%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Charache,%20Greg&rft.aucorp=Trumpf%20Photonics%20Inc&rft.date=2010-03-30&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E07687291%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true