Table lookup voltage compensation for memory cells

Table lookup voltage compensation for memory cells

Systems and methods of regulating voltage at a memory cell are disclosed. An address for the memory cell is determined. Table lookups based on the address are performed. The table lookups yield voltage compensation parameters that can be used to set voltages on the terminals (e.g., source and drain)...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Ang, Boon-Aik, Lewis, Derric J. H
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Ang, Boon-Aik
Lewis, Derric J. H
description Systems and methods of regulating voltage at a memory cell are disclosed. An address for the memory cell is determined. Table lookups based on the address are performed. The table lookups yield voltage compensation parameters that can be used to set voltages on the terminals (e.g., source and drain) of the memory cell.
format Patent
fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07675805</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07675805</sourcerecordid><originalsourceid>FETCH-uspatents_grants_076758053</originalsourceid><addsrcrecordid>eNrjZDAKSUzKSVXIyc_PLi1QKMvPKUlMT1VIzs8tSM0rTizJzM9TSMsvUshNzc0vqlRITs3JKeZhYE1LzClO5YXS3AwKbq4hzh66pcUFiSWpeSXF8elFiSDKwNzM3NTCwNSYCCUAvKUtSg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Table lookup voltage compensation for memory cells</title><source>USPTO Issued Patents</source><creator>Ang, Boon-Aik ; Lewis, Derric J. H</creator><creatorcontrib>Ang, Boon-Aik ; Lewis, Derric J. H ; Spansion LLC</creatorcontrib><description>Systems and methods of regulating voltage at a memory cell are disclosed. An address for the memory cell is determined. Table lookups based on the address are performed. The table lookups yield voltage compensation parameters that can be used to set voltages on the terminals (e.g., source and drain) of the memory cell.</description><language>eng</language><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7675805$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64039</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7675805$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Ang, Boon-Aik</creatorcontrib><creatorcontrib>Lewis, Derric J. H</creatorcontrib><creatorcontrib>Spansion LLC</creatorcontrib><title>Table lookup voltage compensation for memory cells</title><description>Systems and methods of regulating voltage at a memory cell are disclosed. An address for the memory cell is determined. Table lookups based on the address are performed. The table lookups yield voltage compensation parameters that can be used to set voltages on the terminals (e.g., source and drain) of the memory cell.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZDAKSUzKSVXIyc_PLi1QKMvPKUlMT1VIzs8tSM0rTizJzM9TSMsvUshNzc0vqlRITs3JKeZhYE1LzClO5YXS3AwKbq4hzh66pcUFiSWpeSXF8elFiSDKwNzM3NTCwNSYCCUAvKUtSg</recordid><startdate>20100309</startdate><enddate>20100309</enddate><creator>Ang, Boon-Aik</creator><creator>Lewis, Derric J. H</creator><scope>EFH</scope></search><sort><creationdate>20100309</creationdate><title>Table lookup voltage compensation for memory cells</title><author>Ang, Boon-Aik ; Lewis, Derric J. H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_076758053</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Ang, Boon-Aik</creatorcontrib><creatorcontrib>Lewis, Derric J. H</creatorcontrib><creatorcontrib>Spansion LLC</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ang, Boon-Aik</au><au>Lewis, Derric J. H</au><aucorp>Spansion LLC</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Table lookup voltage compensation for memory cells</title><date>2010-03-09</date><risdate>2010</risdate><abstract>Systems and methods of regulating voltage at a memory cell are disclosed. An address for the memory cell is determined. Table lookups based on the address are performed. The table lookups yield voltage compensation parameters that can be used to set voltages on the terminals (e.g., source and drain) of the memory cell.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_uspatents_grants_07675805
source USPTO Issued Patents
title Table lookup voltage compensation for memory cells
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T11%3A13%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Ang,%20Boon-Aik&rft.aucorp=Spansion%20LLC&rft.date=2010-03-09&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E07675805%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true