Compound semiconductor element resistible to high voltage
a a a A compound semiconductor element is provided which electrically connects an electrode formed on one main surface of a compound semiconductor region with a substrate to fix an electric potential of substrate at an electric potential of electrode , thereby preventing fluctuation in electric pote...
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creator | Iwakami, Shinichi |
description | a a a A compound semiconductor element is provided which electrically connects an electrode formed on one main surface of a compound semiconductor region with a substrate to fix an electric potential of substrate at an electric potential of electrode , thereby preventing fluctuation in electric potential of substrate under the changing operating condition of the device for stabilization in electric property of the device. Also, formed between compound semiconductor region and substrate is an insulating layer for blocking a leakage current which may flow longitudinally between one main surface of compound semiconductor region and substrate so that sufficiently high withstand voltage property can be given between compound semiconductor region and substrate . In addition, formed in compound semiconductor region is a notch which extends in the thickness direction from main surface of compound semiconductor region and reaches at least insulating layer , and an insulating protective layer covers a side surface of a conductive film exposed to the notch to prevent occurrence of electric discharge between conductive film and substrate for stable and high withstand voltage. |
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Also, formed between compound semiconductor region and substrate is an insulating layer for blocking a leakage current which may flow longitudinally between one main surface of compound semiconductor region and substrate so that sufficiently high withstand voltage property can be given between compound semiconductor region and substrate . In addition, formed in compound semiconductor region is a notch which extends in the thickness direction from main surface of compound semiconductor region and reaches at least insulating layer , and an insulating protective layer covers a side surface of a conductive film exposed to the notch to prevent occurrence of electric discharge between conductive film and substrate for stable and high withstand voltage.</description><language>eng</language><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7642556$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,777,799,882,64018</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7642556$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Iwakami, Shinichi</creatorcontrib><creatorcontrib>Sanken Electric Co., Ltd</creatorcontrib><title>Compound semiconductor element resistible to high voltage</title><description>a a a A compound semiconductor element is provided which electrically connects an electrode formed on one main surface of a compound semiconductor region with a substrate to fix an electric potential of substrate at an electric potential of electrode , thereby preventing fluctuation in electric potential of substrate under the changing operating condition of the device for stabilization in electric property of the device. Also, formed between compound semiconductor region and substrate is an insulating layer for blocking a leakage current which may flow longitudinally between one main surface of compound semiconductor region and substrate so that sufficiently high withstand voltage property can be given between compound semiconductor region and substrate . In addition, formed in compound semiconductor region is a notch which extends in the thickness direction from main surface of compound semiconductor region and reaches at least insulating layer , and an insulating protective layer covers a side surface of a conductive film exposed to the notch to prevent occurrence of electric discharge between conductive film and substrate for stable and high withstand voltage.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZLB0zs8tyC_NS1EoTs3NTM7PSylNLskvUkjNSc1NzStRKEotziwuyUzKSVUoyVfIyEzPUCjLzylJTE_lYWBNS8wpTuWF0twMCm6uIc4euqXFBYklQL3F8elFiSDKwNzMxMjU1MyYCCUAWV8wLQ</recordid><startdate>20100105</startdate><enddate>20100105</enddate><creator>Iwakami, Shinichi</creator><scope>EFH</scope></search><sort><creationdate>20100105</creationdate><title>Compound semiconductor element resistible to high voltage</title><author>Iwakami, Shinichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_076425563</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Iwakami, Shinichi</creatorcontrib><creatorcontrib>Sanken Electric Co., Ltd</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Iwakami, Shinichi</au><aucorp>Sanken Electric Co., Ltd</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Compound semiconductor element resistible to high voltage</title><date>2010-01-05</date><risdate>2010</risdate><abstract>a a a A compound semiconductor element is provided which electrically connects an electrode formed on one main surface of a compound semiconductor region with a substrate to fix an electric potential of substrate at an electric potential of electrode , thereby preventing fluctuation in electric potential of substrate under the changing operating condition of the device for stabilization in electric property of the device. Also, formed between compound semiconductor region and substrate is an insulating layer for blocking a leakage current which may flow longitudinally between one main surface of compound semiconductor region and substrate so that sufficiently high withstand voltage property can be given between compound semiconductor region and substrate . In addition, formed in compound semiconductor region is a notch which extends in the thickness direction from main surface of compound semiconductor region and reaches at least insulating layer , and an insulating protective layer covers a side surface of a conductive film exposed to the notch to prevent occurrence of electric discharge between conductive film and substrate for stable and high withstand voltage.</abstract><oa>free_for_read</oa></addata></record> |
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title | Compound semiconductor element resistible to high voltage |
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