Method for separating optical and resist effects in process models

Method for separating optical and resist effects in process models

A methodology to improve the through-process model calibration accuracy of a semiconductor manufacturing process using lithographic methods by setting the correct defocus and image plane position in a patterning process model build. Separations of the optical model and the photoresist model are empl...

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Hauptverfasser: Han, Geng, Mansfield, Scott M
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Sprache:eng
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creator Han, Geng
Mansfield, Scott M
description A methodology to improve the through-process model calibration accuracy of a semiconductor manufacturing process using lithographic methods by setting the correct defocus and image plane position in a patterning process model build. Separations of the optical model and the photoresist model are employed by separating out the adverse effects of the exposure tool from the effects of the photoresist. The exposure tool is adjusted to compensate for the errors. The methodology includes a determination of where the simulator best focus location is in comparison to the empirically derived best focus location.
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fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07642020</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07642020</sourcerecordid><originalsourceid>FETCH-uspatents_grants_076420203</originalsourceid><addsrcrecordid>eNqNyjEKAjEQBdA0FqLeYS4ghFW0V5Rt7OxlSCZrIJsJ-bP3F8EDWL3mrd3lIfbWSEk7QRp3tlwn0mY5cCGukbogw0hSkmCgXKl1DQLQrFEKtm6VuEB2PzeO7rfnddwvaGxSDa-p8xd_Ph0HP_jDH-UDCLcy6g</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for separating optical and resist effects in process models</title><source>USPTO Issued Patents</source><creator>Han, Geng ; Mansfield, Scott M</creator><creatorcontrib>Han, Geng ; Mansfield, Scott M ; International Business Machines Corporation</creatorcontrib><description>A methodology to improve the through-process model calibration accuracy of a semiconductor manufacturing process using lithographic methods by setting the correct defocus and image plane position in a patterning process model build. Separations of the optical model and the photoresist model are employed by separating out the adverse effects of the exposure tool from the effects of the photoresist. The exposure tool is adjusted to compensate for the errors. The methodology includes a determination of where the simulator best focus location is in comparison to the empirically derived best focus location.</description><language>eng</language><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7642020$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64012</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7642020$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Han, Geng</creatorcontrib><creatorcontrib>Mansfield, Scott M</creatorcontrib><creatorcontrib>International Business Machines Corporation</creatorcontrib><title>Method for separating optical and resist effects in process models</title><description>A methodology to improve the through-process model calibration accuracy of a semiconductor manufacturing process using lithographic methods by setting the correct defocus and image plane position in a patterning process model build. Separations of the optical model and the photoresist model are employed by separating out the adverse effects of the exposure tool from the effects of the photoresist. The exposure tool is adjusted to compensate for the errors. The methodology includes a determination of where the simulator best focus location is in comparison to the empirically derived best focus location.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNyjEKAjEQBdA0FqLeYS4ghFW0V5Rt7OxlSCZrIJsJ-bP3F8EDWL3mrd3lIfbWSEk7QRp3tlwn0mY5cCGukbogw0hSkmCgXKl1DQLQrFEKtm6VuEB2PzeO7rfnddwvaGxSDa-p8xd_Ph0HP_jDH-UDCLcy6g</recordid><startdate>20100105</startdate><enddate>20100105</enddate><creator>Han, Geng</creator><creator>Mansfield, Scott M</creator><scope>EFH</scope></search><sort><creationdate>20100105</creationdate><title>Method for separating optical and resist effects in process models</title><author>Han, Geng ; Mansfield, Scott M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_076420203</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Han, Geng</creatorcontrib><creatorcontrib>Mansfield, Scott M</creatorcontrib><creatorcontrib>International Business Machines Corporation</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Han, Geng</au><au>Mansfield, Scott M</au><aucorp>International Business Machines Corporation</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for separating optical and resist effects in process models</title><date>2010-01-05</date><risdate>2010</risdate><abstract>A methodology to improve the through-process model calibration accuracy of a semiconductor manufacturing process using lithographic methods by setting the correct defocus and image plane position in a patterning process model build. Separations of the optical model and the photoresist model are employed by separating out the adverse effects of the exposure tool from the effects of the photoresist. The exposure tool is adjusted to compensate for the errors. The methodology includes a determination of where the simulator best focus location is in comparison to the empirically derived best focus location.</abstract><oa>free_for_read</oa></addata></record>
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title Method for separating optical and resist effects in process models
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T13%3A47%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Han,%20Geng&rft.aucorp=International%20Business%20Machines%20Corporation&rft.date=2010-01-05&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E07642020%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true