Methods for fabricating a semiconductor structure using a mandrel and semiconductor structures formed thereby

Methods of fabricating a semiconductor structure in which a body of monocrystalline silicon is formed on a sidewall of a sacrificial mandrel and semiconductor structures made by the methods. After the body of monocrystalline silicon is formed, the sacrificial material of the mandrel is removed selec...

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Hauptverfasser: Cheng, Kangguo, Mandelman, Jack Allan
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creator Cheng, Kangguo
Mandelman, Jack Allan
description Methods of fabricating a semiconductor structure in which a body of monocrystalline silicon is formed on a sidewall of a sacrificial mandrel and semiconductor structures made by the methods. After the body of monocrystalline silicon is formed, the sacrificial material of the mandrel is removed selective to the monocrystalline silicon of the body. The mandrel may be composed of porous silicon and the body may be fabricated using either a semiconductor-on-insulator substrate or a bulk substrate. The body may be used to fabricate a fin body of a fin-type field effect transistor.
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fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07638381</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07638381</sourcerecordid><originalsourceid>FETCH-uspatents_grants_076383813</originalsourceid><addsrcrecordid>eNqNjLsKAjEQRdNYiPoP8wOCEtDtRbGxs5fZZLIb2CQyMyn8e-OjFazOhXO4c5MupGPxAqEwBOw5OtSYB0AQStGV7KvT5kS5jcoEVT4-YfZMEzT8at-3iTzoSEz9Y2lmASeh1ZcLA6fj9XBeV7mjUla5DYwvbPY729lua_9InqNfREA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Methods for fabricating a semiconductor structure using a mandrel and semiconductor structures formed thereby</title><source>USPTO Issued Patents</source><creator>Cheng, Kangguo ; Mandelman, Jack Allan</creator><creatorcontrib>Cheng, Kangguo ; Mandelman, Jack Allan ; International Business Machines Corporation</creatorcontrib><description>Methods of fabricating a semiconductor structure in which a body of monocrystalline silicon is formed on a sidewall of a sacrificial mandrel and semiconductor structures made by the methods. After the body of monocrystalline silicon is formed, the sacrificial material of the mandrel is removed selective to the monocrystalline silicon of the body. The mandrel may be composed of porous silicon and the body may be fabricated using either a semiconductor-on-insulator substrate or a bulk substrate. The body may be used to fabricate a fin body of a fin-type field effect transistor.</description><language>eng</language><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7638381$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64039</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7638381$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Cheng, Kangguo</creatorcontrib><creatorcontrib>Mandelman, Jack Allan</creatorcontrib><creatorcontrib>International Business Machines Corporation</creatorcontrib><title>Methods for fabricating a semiconductor structure using a mandrel and semiconductor structures formed thereby</title><description>Methods of fabricating a semiconductor structure in which a body of monocrystalline silicon is formed on a sidewall of a sacrificial mandrel and semiconductor structures made by the methods. After the body of monocrystalline silicon is formed, the sacrificial material of the mandrel is removed selective to the monocrystalline silicon of the body. The mandrel may be composed of porous silicon and the body may be fabricated using either a semiconductor-on-insulator substrate or a bulk substrate. The body may be used to fabricate a fin body of a fin-type field effect transistor.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNjLsKAjEQRdNYiPoP8wOCEtDtRbGxs5fZZLIb2CQyMyn8e-OjFazOhXO4c5MupGPxAqEwBOw5OtSYB0AQStGV7KvT5kS5jcoEVT4-YfZMEzT8at-3iTzoSEz9Y2lmASeh1ZcLA6fj9XBeV7mjUla5DYwvbPY729lua_9InqNfREA</recordid><startdate>20091229</startdate><enddate>20091229</enddate><creator>Cheng, Kangguo</creator><creator>Mandelman, Jack Allan</creator><scope>EFH</scope></search><sort><creationdate>20091229</creationdate><title>Methods for fabricating a semiconductor structure using a mandrel and semiconductor structures formed thereby</title><author>Cheng, Kangguo ; Mandelman, Jack Allan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_076383813</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Cheng, Kangguo</creatorcontrib><creatorcontrib>Mandelman, Jack Allan</creatorcontrib><creatorcontrib>International Business Machines Corporation</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Cheng, Kangguo</au><au>Mandelman, Jack Allan</au><aucorp>International Business Machines Corporation</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Methods for fabricating a semiconductor structure using a mandrel and semiconductor structures formed thereby</title><date>2009-12-29</date><risdate>2009</risdate><abstract>Methods of fabricating a semiconductor structure in which a body of monocrystalline silicon is formed on a sidewall of a sacrificial mandrel and semiconductor structures made by the methods. After the body of monocrystalline silicon is formed, the sacrificial material of the mandrel is removed selective to the monocrystalline silicon of the body. The mandrel may be composed of porous silicon and the body may be fabricated using either a semiconductor-on-insulator substrate or a bulk substrate. The body may be used to fabricate a fin body of a fin-type field effect transistor.</abstract><oa>free_for_read</oa></addata></record>
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title Methods for fabricating a semiconductor structure using a mandrel and semiconductor structures formed thereby
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-21T07%3A38%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Cheng,%20Kangguo&rft.aucorp=International%20Business%20Machines%20Corporation&rft.date=2009-12-29&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E07638381%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true