Method of aligning a reticle for formation of semiconductor devices
A method for aligning a reticle is provided. A first patterned layer with a first alignment grid is formed. Sidewall layers are formed over the first patterned layer to perform a first shrink. The first alignment grid after shrink is etched into an etch layer to form an etched first alignment grid....
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| Format: | Patent |
| Sprache: | eng |
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