Method of aligning a reticle for formation of semiconductor devices

A method for aligning a reticle is provided. A first patterned layer with a first alignment grid is formed. Sidewall layers are formed over the first patterned layer to perform a first shrink. The first alignment grid after shrink is etched into an etch layer to form an etched first alignment grid....

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1. Verfasser:	Sadjadi, S. M. Reza
Format:	Patent
Sprache:	eng
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creator	Sadjadi, S. M. Reza
description	A method for aligning a reticle is provided. A first patterned layer with a first alignment grid is formed. Sidewall layers are formed over the first patterned layer to perform a first shrink. The first alignment grid after shrink is etched into an etch layer to form an etched first alignment grid. The patterned layer is removed. An optical pattern of a second alignment grid aligned over the etched first alignment grid is measured. The optical pattern is used to determine whether the second alignment grid is aligned over the etched first alignment grid.
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title	Method of aligning a reticle for formation of semiconductor devices
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