Image sensor with a gate electrode between the photoelectric conversion region and the charge detection region, the gate electrode comprising p-type and n-type regions adjacent to one another and method of fabricating the same
Example embodiments relate to an image sensor and a fabrication method thereof. An image sensor may include a semiconductor substrate. A charge transfer structure may be formed on the semiconductor substrate. The charge transfer structure may include a gate insulating film that may be formed on a ch...
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| Sprache: | eng |
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