Bipolar transistor with isolation and direct contacts

Bipolar transistor with isolation and direct contacts

TA bipolar transistor has a collector that is contacted directly beneath a base-collector junction by metallization to reduce collector resistance. A conventional reach-through and buried layer, as well as their associated resistance, are eliminated. The transistor is well isolated, nearly eliminati...

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Hauptverfasser: Ahlgren, David C, Freeman, Gregory G, Pagette, Francois, Schnabel, Christopher M, Topol, Anna W
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Sprache:eng
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creator Ahlgren, David C
Freeman, Gregory G
Pagette, Francois
Schnabel, Christopher M
Topol, Anna W
description TA bipolar transistor has a collector that is contacted directly beneath a base-collector junction by metallization to reduce collector resistance. A conventional reach-through and buried layer, as well as their associated resistance, are eliminated. The transistor is well isolated, nearly eliminating well-to-substrate capacitance and device-to-device leakage current. The structure provides for improved electrical performance, including improved f, Fmax and drive current.
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A conventional reach-through and buried layer, as well as their associated resistance, are eliminated. The transistor is well isolated, nearly eliminating well-to-substrate capacitance and device-to-device leakage current. The structure provides for improved electrical performance, including improved f, Fmax and drive current.</abstract><oa>free_for_read</oa></addata></record>
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title Bipolar transistor with isolation and direct contacts
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