Strained layers within semiconductor buffer structures

A semiconductor workpiece including a substrate, a relaxed buffer layer including a graded portion formed on the substrate, and at least one strained transitional layer within the graded portion of the relaxed buffer layer and method of manufacturing the same. The at least one strained transitional...

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Bibliographische Detailangaben

Hauptverfasser:	Cody, Nyles W, Figuet, Christophe, Kennard, Mark
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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