Methods of forming buried bit line DRAM circuitry

A method of forming buried bit line DRAM circuitry includes collectively forming a buried bit line forming trench, bit line vias extending from the bit line forming trench, and memory array storage node vias within a dielectric mass using only two masking steps. Conductive material is simultaneously...

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Bibliographische Detailangaben

Hauptverfasser:	Liao, Ann K, Westphal, Michael J
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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