Alternate row-based reading and writing for non-volatile memory

A set of storage elements is programmed beginning with a word line WLn adjacent a select gate line for the set. After programming the first word line, the next word line WLn+1 adjacent to the first word line is skipped and the next word line WLn+2 adjacent to WLn+1 is programmed. WLn+1 is then progr...

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Bibliographische Detailangaben
1. Verfasser: Guterman, Daniel C
Format: Patent
Sprache:eng
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