Manufacturing method of semiconductor device

After forming a resist film on a Si substrate, a circuit pattern for a semiconductor integrated circuit, a first L-shaped length measuring pattern and a cross-shaped monitor pattern for alignment are formed on the resist film. Next, based on these patterns, the Si substrate is patterned. Thereafter,...

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Bibliographische Detailangaben

1. Verfasser:	Terahara, Masanori
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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