Photoresist composition, method for forming film pattern using the same, and method for manufacturing thin film transistor array panel using the same

Photoresist composition, method for forming film pattern using the same, and method for manufacturing thin film transistor array panel using the same

1234 121 2 A photoresist composition includes a novolac resin having where each of R, R, R, and Ris an alkyl group having a hydrogen atom or between one through six carbon atoms and n is an integer ranging from zero through three; and a mercapto compound having Z-SH, or SH-Z-SH, where each of Zand Z...

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Bibliographische Detailangaben
Hauptverfasser: Park, Jeong-Min, Ryu, Mi-Sun, Lee, Hi-Kuk, Jeon, Woo-Seok
Format: Patent
Sprache:eng
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Zusammenfassung:1234 121 2 A photoresist composition includes a novolac resin having where each of R, R, R, and Ris an alkyl group having a hydrogen atom or between one through six carbon atoms and n is an integer ranging from zero through three; and a mercapto compound having Z-SH, or SH-Z-SH, where each of Zand Zis an alkyl group or an alkyl group having one through twenty carbon atoms, a sensitizer, and a solvent.