MOSFET fuse programmed by electromigration

A one-time programmable field effect transistor (FET) e-fuse has a silicided gate connected to the drain while the source is grounded. A voltage stimulus applied to the drain forces current to flow through the channel coupling the drain to the source. The magnitude of the current exceeding the thres...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Chakravarti, Satya N, Rajeevakumar, Thekkemadathil V, Sullivan, Timothy J
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
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