Crystallographic preferential etch to define a recessed-region for epitaxial growth

Crystallographic preferential etch to define a recessed-region for epitaxial growth

A semiconductor device comprising a gate structure on a semiconductor substrate and a recessed-region in the semiconductor substrate. The recessed-region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.

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Hauptverfasser: Rotondaro, Antonio Luis Pacheco, Hurd, Trace Q, Koontz, Elisabeth Marley
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Sprache:eng
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creator Rotondaro, Antonio Luis Pacheco
Hurd, Trace Q
Koontz, Elisabeth Marley
description A semiconductor device comprising a gate structure on a semiconductor substrate and a recessed-region in the semiconductor substrate. The recessed-region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.
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title Crystallographic preferential etch to define a recessed-region for epitaxial growth
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