Structure and method for improved heat conduction for semiconductor devices

A thermally conductive structure for a semiconductor integrated circuit and a method for making the structure. The structure comprises one or more vertical and/or horizontal thermally conductive elements disposed proximate a device for improving thermal conductivity from the device to a substrate of...

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Hauptverfasser: Kerr, Daniel Charles, Chen, Alan Sangone, Martin, Jr, Edward Paul, Hamad, Amal Ma, Russell, William A
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Sprache:eng
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creator Kerr, Daniel Charles
Chen, Alan Sangone
Martin, Jr, Edward Paul
Hamad, Amal Ma
Russell, William A
description A thermally conductive structure for a semiconductor integrated circuit and a method for making the structure. The structure comprises one or more vertical and/or horizontal thermally conductive elements disposed proximate a device for improving thermal conductivity from the device to a substrate of the integrated circuit. In one embodiment a heat sink is affixed to the integrated circuit for heat flow from the integrated circuit. The method comprises forming openings in material layers overlying the semiconductor substrate, wherein the openings are disposed proximate the device and extend to the substrate. A thermally conductive material is formed in the openings to provide a thermal path from the device to the substrate.
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fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07498204</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07498204</sourcerecordid><originalsourceid>FETCH-uspatents_grants_074982043</originalsourceid><addsrcrecordid>eNrjZPAOLikqTS4pLUpVSMxLUchNLcnIT1FIyy9SyMwtKMovS01RyEhNLFFIzs9LAarLzM8DSxan5mZChYC8lNSyzOTUYh4G1rTEnOJUXijNzaDg5hri7KFbWlyQWJKaV1Icn16UCKIMzE0sLYwMTIyJUAIAZKg29w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Structure and method for improved heat conduction for semiconductor devices</title><source>USPTO Issued Patents</source><creator>Kerr, Daniel Charles ; Chen, Alan Sangone ; Martin, Jr, Edward Paul ; Hamad, Amal Ma ; Russell, William A</creator><creatorcontrib>Kerr, Daniel Charles ; Chen, Alan Sangone ; Martin, Jr, Edward Paul ; Hamad, Amal Ma ; Russell, William A ; Agere Systems Inc</creatorcontrib><description>A thermally conductive structure for a semiconductor integrated circuit and a method for making the structure. The structure comprises one or more vertical and/or horizontal thermally conductive elements disposed proximate a device for improving thermal conductivity from the device to a substrate of the integrated circuit. In one embodiment a heat sink is affixed to the integrated circuit for heat flow from the integrated circuit. The method comprises forming openings in material layers overlying the semiconductor substrate, wherein the openings are disposed proximate the device and extend to the substrate. A thermally conductive material is formed in the openings to provide a thermal path from the device to the substrate.</description><language>eng</language><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7498204$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64038</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7498204$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kerr, Daniel Charles</creatorcontrib><creatorcontrib>Chen, Alan Sangone</creatorcontrib><creatorcontrib>Martin, Jr, Edward Paul</creatorcontrib><creatorcontrib>Hamad, Amal Ma</creatorcontrib><creatorcontrib>Russell, William A</creatorcontrib><creatorcontrib>Agere Systems Inc</creatorcontrib><title>Structure and method for improved heat conduction for semiconductor devices</title><description>A thermally conductive structure for a semiconductor integrated circuit and a method for making the structure. The structure comprises one or more vertical and/or horizontal thermally conductive elements disposed proximate a device for improving thermal conductivity from the device to a substrate of the integrated circuit. In one embodiment a heat sink is affixed to the integrated circuit for heat flow from the integrated circuit. The method comprises forming openings in material layers overlying the semiconductor substrate, wherein the openings are disposed proximate the device and extend to the substrate. A thermally conductive material is formed in the openings to provide a thermal path from the device to the substrate.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZPAOLikqTS4pLUpVSMxLUchNLcnIT1FIyy9SyMwtKMovS01RyEhNLFFIzs9LAarLzM8DSxan5mZChYC8lNSyzOTUYh4G1rTEnOJUXijNzaDg5hri7KFbWlyQWJKaV1Icn16UCKIMzE0sLYwMTIyJUAIAZKg29w</recordid><startdate>20090303</startdate><enddate>20090303</enddate><creator>Kerr, Daniel Charles</creator><creator>Chen, Alan Sangone</creator><creator>Martin, Jr, Edward Paul</creator><creator>Hamad, Amal Ma</creator><creator>Russell, William A</creator><scope>EFH</scope></search><sort><creationdate>20090303</creationdate><title>Structure and method for improved heat conduction for semiconductor devices</title><author>Kerr, Daniel Charles ; Chen, Alan Sangone ; Martin, Jr, Edward Paul ; Hamad, Amal Ma ; Russell, William A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_074982043</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Kerr, Daniel Charles</creatorcontrib><creatorcontrib>Chen, Alan Sangone</creatorcontrib><creatorcontrib>Martin, Jr, Edward Paul</creatorcontrib><creatorcontrib>Hamad, Amal Ma</creatorcontrib><creatorcontrib>Russell, William A</creatorcontrib><creatorcontrib>Agere Systems Inc</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kerr, Daniel Charles</au><au>Chen, Alan Sangone</au><au>Martin, Jr, Edward Paul</au><au>Hamad, Amal Ma</au><au>Russell, William A</au><aucorp>Agere Systems Inc</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Structure and method for improved heat conduction for semiconductor devices</title><date>2009-03-03</date><risdate>2009</risdate><abstract>A thermally conductive structure for a semiconductor integrated circuit and a method for making the structure. The structure comprises one or more vertical and/or horizontal thermally conductive elements disposed proximate a device for improving thermal conductivity from the device to a substrate of the integrated circuit. In one embodiment a heat sink is affixed to the integrated circuit for heat flow from the integrated circuit. The method comprises forming openings in material layers overlying the semiconductor substrate, wherein the openings are disposed proximate the device and extend to the substrate. A thermally conductive material is formed in the openings to provide a thermal path from the device to the substrate.</abstract><oa>free_for_read</oa></addata></record>
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title Structure and method for improved heat conduction for semiconductor devices
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T20%3A58%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kerr,%20Daniel%20Charles&rft.aucorp=Agere%20Systems%20Inc&rft.date=2009-03-03&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E07498204%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true