Method of manufacturing a flash memory device

A method of manufacturing a flash memory device includes the steps of forming a tunnel oxide layer and a polysilicon layer over a semiconductor substrate. An etch process is then performed to form a pattern and a trench. An isolation layer is formed in the trench. A polysilicon spacer layer is forme...

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Bibliographische Detailangaben
1. Verfasser: Ahn, Myung-Kyu
Format: Patent
Sprache:eng
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