Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory

Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory

A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to...

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Hauptverfasser: Okuno, Shiho, Ohsawa, Yuichi, Haneda, Shigeru, Kamiguchi, Yuzo, Kishi, Tatsuya
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Sprache:eng
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creator Okuno, Shiho
Ohsawa, Yuichi
Haneda, Shigeru
Kamiguchi, Yuzo
Kishi, Tatsuya
description A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to form a second ferromagnetic layer overlying the insulating layer which buries the aperture. The aperture can have an opening width not larger than 20 nm. A current flowing between the first ferromagnetic layer and the needle can be monitored, and thrusting of the needle an be interrupted when the current reaches a predetermined value.
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title Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
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