Method of manufacturing a semiconductor integrated circuit device having a columnar laminate

3For improving the filling properties between vertical MISFETs constituting a SRAM memory cell, the vertical MISFETs are formed over horizontal drive MISFETs and transfer MISFETs, and they are disposed with a narrow pitch in the Y direction and a wide pitch in the X direction. After a first insulati...

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Hauptverfasser:	Murata, Tatsunori, Nakamura, Takahiro, Suzuki, Yasumichi
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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