Method to improve performance of a bipolar device using an amorphizing implant

Method to improve performance of a bipolar device using an amorphizing implant

The invention, in one aspect, provides a semiconductor device that comprises a bipolar transistor located over and within a semiconductor substrate, a collector located within a tub of the bipolar transistor and having an amorphous region formed at least partially therein, a base located over the co...

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Hauptverfasser: Chen, Alan S, Dyson, Mark, Kerr, Daniel C, Rossi, Nace M
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Sprache:eng
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creator Chen, Alan S
Dyson, Mark
Kerr, Daniel C
Rossi, Nace M
description The invention, in one aspect, provides a semiconductor device that comprises a bipolar transistor located over and within a semiconductor substrate, a collector located within a tub of the bipolar transistor and having an amorphous region formed at least partially therein, a base located over the collector, and an emitter located over the base. There is also provided a method of fabricating the semiconductor device.
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title Method to improve performance of a bipolar device using an amorphizing implant
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