Method to improve time dependent dielectric breakdown

In the back end of an integrated circuit employing dual-damascene interconnects, the interconnect members have a first non-conformal liner that has a thicker portion at the top of the trench level of the interconnect; and a conformal second liner that combines with the first liner to block diffusion...

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Hauptverfasser: Chanda, Kaushik, Demarest, James J, Filippi, Ronald G, Iggulden, Roy C, Kiewra, Edward W, McGahay, Vincent J, Wang, Ping-Chuan, Wang, Yun-Yu
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creator Chanda, Kaushik
Demarest, James J
Filippi, Ronald G
Iggulden, Roy C
Kiewra, Edward W
McGahay, Vincent J
Wang, Ping-Chuan
Wang, Yun-Yu
description In the back end of an integrated circuit employing dual-damascene interconnects, the interconnect members have a first non-conformal liner that has a thicker portion at the top of the trench level of the interconnect; and a conformal second liner that combines with the first liner to block diffusion of the metal fill material.
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fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07473636</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07473636</sourcerecordid><originalsourceid>FETCH-uspatents_grants_074736363</originalsourceid><addsrcrecordid>eNrjZDD1TS3JyE9RKMlXyMwtKMovS1UoycxNVUhJLUjNS0nNK1FIyUzNSU0uKcpMVkgqSk3MTskvz-NhYE1LzClO5YXS3AwKbq4hzh66pcUFiSVAXcXx6UWJIMrA3MTc2AwIiVACAEvbLlM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method to improve time dependent dielectric breakdown</title><source>USPTO Issued Patents</source><creator>Chanda, Kaushik ; Demarest, James J ; Filippi, Ronald G ; Iggulden, Roy C ; Kiewra, Edward W ; McGahay, Vincent J ; Wang, Ping-Chuan ; Wang, Yun-Yu</creator><creatorcontrib>Chanda, Kaushik ; Demarest, James J ; Filippi, Ronald G ; Iggulden, Roy C ; Kiewra, Edward W ; McGahay, Vincent J ; Wang, Ping-Chuan ; Wang, Yun-Yu ; International Business Machines Corporation</creatorcontrib><description>In the back end of an integrated circuit employing dual-damascene interconnects, the interconnect members have a first non-conformal liner that has a thicker portion at the top of the trench level of the interconnect; and a conformal second liner that combines with the first liner to block diffusion of the metal fill material.</description><language>eng</language><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7473636$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64039</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7473636$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Chanda, Kaushik</creatorcontrib><creatorcontrib>Demarest, James J</creatorcontrib><creatorcontrib>Filippi, Ronald G</creatorcontrib><creatorcontrib>Iggulden, Roy C</creatorcontrib><creatorcontrib>Kiewra, Edward W</creatorcontrib><creatorcontrib>McGahay, Vincent J</creatorcontrib><creatorcontrib>Wang, Ping-Chuan</creatorcontrib><creatorcontrib>Wang, Yun-Yu</creatorcontrib><creatorcontrib>International Business Machines Corporation</creatorcontrib><title>Method to improve time dependent dielectric breakdown</title><description>In the back end of an integrated circuit employing dual-damascene interconnects, the interconnect members have a first non-conformal liner that has a thicker portion at the top of the trench level of the interconnect; and a conformal second liner that combines with the first liner to block diffusion of the metal fill material.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZDD1TS3JyE9RKMlXyMwtKMovS1UoycxNVUhJLUjNS0nNK1FIyUzNSU0uKcpMVkgqSk3MTskvz-NhYE1LzClO5YXS3AwKbq4hzh66pcUFiSVAXcXx6UWJIMrA3MTc2AwIiVACAEvbLlM</recordid><startdate>20090106</startdate><enddate>20090106</enddate><creator>Chanda, Kaushik</creator><creator>Demarest, James J</creator><creator>Filippi, Ronald G</creator><creator>Iggulden, Roy C</creator><creator>Kiewra, Edward W</creator><creator>McGahay, Vincent J</creator><creator>Wang, Ping-Chuan</creator><creator>Wang, Yun-Yu</creator><scope>EFH</scope></search><sort><creationdate>20090106</creationdate><title>Method to improve time dependent dielectric breakdown</title><author>Chanda, Kaushik ; Demarest, James J ; Filippi, Ronald G ; Iggulden, Roy C ; Kiewra, Edward W ; McGahay, Vincent J ; Wang, Ping-Chuan ; Wang, Yun-Yu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_074736363</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Chanda, Kaushik</creatorcontrib><creatorcontrib>Demarest, James J</creatorcontrib><creatorcontrib>Filippi, Ronald G</creatorcontrib><creatorcontrib>Iggulden, Roy C</creatorcontrib><creatorcontrib>Kiewra, Edward W</creatorcontrib><creatorcontrib>McGahay, Vincent J</creatorcontrib><creatorcontrib>Wang, Ping-Chuan</creatorcontrib><creatorcontrib>Wang, Yun-Yu</creatorcontrib><creatorcontrib>International Business Machines Corporation</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chanda, Kaushik</au><au>Demarest, James J</au><au>Filippi, Ronald G</au><au>Iggulden, Roy C</au><au>Kiewra, Edward W</au><au>McGahay, Vincent J</au><au>Wang, Ping-Chuan</au><au>Wang, Yun-Yu</au><aucorp>International Business Machines Corporation</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method to improve time dependent dielectric breakdown</title><date>2009-01-06</date><risdate>2009</risdate><abstract>In the back end of an integrated circuit employing dual-damascene interconnects, the interconnect members have a first non-conformal liner that has a thicker portion at the top of the trench level of the interconnect; and a conformal second liner that combines with the first liner to block diffusion of the metal fill material.</abstract><oa>free_for_read</oa></addata></record>
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title Method to improve time dependent dielectric breakdown
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T17%3A11%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Chanda,%20Kaushik&rft.aucorp=International%20Business%20Machines%20Corporation&rft.date=2009-01-06&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E07473636%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true