Method of manufacturing a multi-workfunction gates for a CMOS circuit

A method of manufacturing a device includes doping a low voltage threshold area and a high voltage threshold area. Gate structures are formed over the low voltage threshold and high voltage threshold areas while protecting the gate structure over the low voltage threshold area. A silicidation proces...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Chen, Xiangdong, Rengarajan, Rajesh
Format: Patent
Sprache:eng
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