Aluminum nitride sintered body, semiconductor manufacturing member, and method of manufacturing aluminum nitride sintered body

An aluminum nitride sintered body is provided, which essentially contains aluminum nitride, 0.4 to 2.5 wt % magnesium and 2.0 to 5.0 wt % yttrium. The aluminum nitride sintered body has an average particle size of not more than 1.0 μm.

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Hauptverfasser:	Teratani, Naomi, Yamada, Naohito
Format:	Patent
Sprache:	eng
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creator	Teratani, Naomi Yamada, Naohito
description	An aluminum nitride sintered body is provided, which essentially contains aluminum nitride, 0.4 to 2.5 wt % magnesium and 2.0 to 5.0 wt % yttrium. The aluminum nitride sintered body has an average particle size of not more than 1.0 μm.
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title	Aluminum nitride sintered body, semiconductor manufacturing member, and method of manufacturing aluminum nitride sintered body
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